ISL9R8120P2【PDF 1/6 页】8 AMP 1200V STEALTH DIODE

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ISL9R8120P2

ISL9R8120S3S

1200

STEALTH? Diode

ISL9R8120P2,

ISL9R8120S3S

Features

Applications

Switch Mode Power Supplies

Hard Switched PFC Boost Diode

UPS Free Wheeling Diode

Motor Drive FWD

SMPS FWD

Snubber Diode

Device Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Rating

Unit

VRRM

Repetitive Peak Reverse Voltage

1200 V

VRWM

Working Peak Reverse Voltage

1200 V

DC Blocking Voltage

1200 V

IF(AV)

Average Rectified Forward Current (TC

= 105

oC)

IFRM

Repetitive Peak Surge Current

(20

kHz Square Wave)

IFSM

Nonrepetitive Peak

urge Current

alfwave 1 Phase 60

Hz)

100

Power Dissipation

EAVL

Avalanche Energy

mH)

TJ, TSTG

Operating and Storage Temperature Range

-55 to 150 °C

TPKG

Maximum Temperature for Soldering

Leads at

063

in (1.6

mm)

from Case for 10

Package Body for 10s,

ee Application Note

N-7528

300

260

°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

JEDEC TO-220AC

ANODE

CATHODE

(BOTTOM SIDE

METAL)

JEDEC TO-263AB

CATHODE

(FLANGE)

N / C

ANODE

Package

Symbol

Stealth Recovery trr

= 300 ns (@

= 8 A)

? Max Forward Voltage, VF

= 3.3 V (@ T

= 25°C)

1200

V Reverse Voltage and High Reliability

? Avalanche Energy Rated

? RoHS compliant

June

200

A, 1200

V, STEALTH? Diode

The ISL9R8120P2, ISL9R8120S3S is a STEALTH? diode

optimized for low loss performance in high frequency hard

switched applications. The STEALTH?

family exhibits low

reverse recovery

current (I

RM(REC)) and exceptionally soft

recovery under typical operating conditions. This device is

intended for use as a free wheeling or boost diode in power

supplies

and other power switching applications. The low

IRM(REC)

and short ta phase reduce loss

in s

witching

transistors. The soft recovery minimizes ringing, expanding

the range of conditions under which the diode may be

operated without the use of additional snubber circuitry.

Consider using the STEALTH? diode with an SMPS IGBT to

provide the most efficient and highest power density design

at lower cost.

?2002

Fairchild

Semiconductor Corporation

ISL9R8120P2, ISL9R8120S3S

Rev.

www.fairchildsemi.com

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